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| New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS (R) TO-220AB TO-263AB K FEATURES * Trench MOS Schottky technology * Low forward voltage drop, low power losses * High efficiency operation 2 * Low thermal resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) * Solder dip 260 C, 40 s (for TO-220AB) * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB and TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum 2 V60100C PIN 1 PIN 3 PIN 2 CASE 3 1 VB60100C PIN 1 PIN 2 K HEATSINK 1 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 100 V 320 A 0.66 V 150 C MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (Fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range per diode SYMBOL VRRM IF(AV) IFSM TJ, TSTG V60100C 100 60 30 A 320 - 40 to + 150 C VB60100C UNIT V Document Number: 88942 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product V60100C & VB60100C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 10 A IF = 15 A IF = 20 A IF = 30 A IF = 5 A IF = 10 A IF = 15 A IF = 20 A IF = 30 A VR = 80 V Reverse current at rated VR per diode (2) VR = 100 V Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms TA = 25 C SYMBOL VBR TYP. 100 (minimum) 0.45 0.52 0.58 0.63 0.73 VF TA = 125 C 0.36 0.45 0.53 0.58 0.66 24 13 IR 65 30 MAX. 0.63 0.79 0.58 0.70 500 20 1000 A mA A mA UNIT TA = 25 C Instantaneous forward voltage per diode (1) V TA = 25 C TA = 125 C TA = 25 C TA = 125 C THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RJC V60100C 2.5 VB60100C 2.5 UNIT C/W ORDERING INFORMATION PACKAGE TO-220AB TO-263AB TO-263AB PREFERRED P/N V60100C-E3/4W VB60100C-E3/4W VB60100C-E3/8W UNIT WEIGHT (g) 1.89 1.38 1.38 PACKAGE CODE 4W 4W 8W BASE QUANTITY 50/tube 50/tube 800/reel DELIVERY MODE Tube Tube Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 70 Resistive or Inductive Load 60 30 D = 0.8 25 D = 0.5 D = 0.3 20 D = 1.0 D = 0.2 15 D = 0.1 T 10 Average Forward Current (A) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Average Power Loss (W) 5 D = tp/T tp 0 0 5 10 15 20 25 30 35 Case Temperature (C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88942 Revision: 19-May-08 New Product V60100C & VB60100C Vishay General Semiconductor 100 10 000 TA = 150 C TA = 125 C TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 Junction Capacitance (pF) TA = 100 C 1 TA = 25 C 1000 0.1 0 0.2 0.4 0.6 0.8 1 100 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 1000 10 100 TA = 150 C TA = 125 C TA = 100 C 10 1 Transient Thermal Impedance (C/W) 60 70 80 90 100 Instantaneous Reverse Current (mA) 1 0.1 TA = 25 C 0.01 0.001 10 20 30 40 50 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88942 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product V60100C & VB60100C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 TO-263AB 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88942 Revision: 19-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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